IPB60R299CP - Power Transistor

Datasheet Summary

Features

Lowest figure-of-merit R ONxQg.
Ultra low gate charge.
Extreme dv/dt rated.
High peak current capability.
Qualified according to JEDEC1) for target.

Infineon Technologies

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Datasheet Details

Part number	IPB60R299CP
Manufacturer	Infineon Technologies
File Size	308.65 KB
Description	Power Transistor
Datasheet	IPB60R299CP Datasheet
Additional preview pages of the IPB60R299CP datasheet.

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Full PDF Text Transcription

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IPB60R299CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.

Published: Aug 1, 2011 |