IPB60R385CP Datasheet | Infineon

Cool MOSTM Power Transistor Features - Lowest figure-of-merit R ON x Qg - Ultra low gate charge - High peak current capability - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.385 Ω 17 n C PG-TO263 Cool MOS CP is specially designed for: - Hard switching SMPS topologies Type IPB60R385CP Package PG-TO263 Ordering Code SP000228365 Marking 6R385P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V Value 9.0 5.7 27 227 0.3 3 50 ±20 ±30 83 -55 ... 150 W °C A V/ns V m J Unit A ..net Rev. 2.0 page 1 2006-06-06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R th JC R th JA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) reflow MSL 1 1.5 62 K/W T C=25 °C Value 5.2 27 15 Values typ. max. V/ns Unit Unit A - 35 - Soldering temperature, wave- & reflowsolderin allowed T sold - - °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=0.34 m A V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150...