IPB60R520CP Datasheet | Infineon

Cool MOSTM Power Transistor Features - Lowest figure-of-merit R ON x Qg - Ultra low gate charge - Extreme dv/dt rated - High peak current capability - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant Product Summary V DS @ Tj,max R DS(on),max @ Tj = 25°C Q g,typ 650 V 0.520 Ω 24 n C PG-TO263 Cool MOS CP is designed for: - Hard switching SMPS topologies Type IPB60R520CP Package PG-TO263 Marking 6R520P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=2.5 A, V DD=50 V I D=2.5 A, V DD=50 V Value 6.8 4.3 17 166 0.25 2.5 50 ±20 ±30 66 -55 ... 150 W °C A V/ns V m J Unit A ..net Rev. 2.0 page 1 2008-02-15 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R th JC R th JA leaded SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=250 µA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=3.8 A, T j=25 °C V GS=10 V, I D=3.8 A, T j=150 °C Gate resistance Rev. 2.0 RG f =1 MHz,...