IPB65R280E6 Datasheet PDF - Infineon Technologies MOSFET Specs

IPB65R280E6 - MOSFET

Datasheet Summary

Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free gate pin 1 drain pin 2.

Datasheet Details

Part number	IPB65R280E6
Manufacturer	Infineon Technologies
File Size	833.93 KB
Description	MOSFET
Datasheet	IPB65R280E6 Datasheet
Additional preview pages of the IPB65R280E6 datasheet.

📁 Similar Datasheet

IPB65R280E6 - N-Channel MOSFET (INCHANGE)

IPB65R280C6 - N-Channel MOSFET (INCHANGE)

IPB65R225C7 - N-Channel MOSFET (INCHANGE)

IPB65R225C7 - MOSFET (Infineon)

IPB65R041CFD7 - 650V MOSFET (Infineon)

IPB65R045C7 - MOSFET (Infineon)

IPB65R045C7 - N-Channel MOSFET (INCHANGE)

IPB65R065C7 - MOSFET (Infineon)

IPB65R065C7 - N-Channel MOSFET (INCHANGE)

IPB65R090CFD7 - 650V MOSFET (Infineon)

Full PDF Text Transcription

Click to expand full text

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final www.DataSheet4U.net In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use.

Published: Aug 1, 2011 |