• Part: IPB77N06S2-12
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 152.66 KB
Download IPB77N06S2-12 Datasheet PDF
Infineon
IPB77N06S2-12
IPB77N06S2-12 is manufactured by Infineon.
OptiMOS® Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested IPB77N06S2-12 IPP77N06S2-12 Product Summary V DS R DS(on),max (SMD version) ID 55 V 11.7 mΩ 77 A PG-TO263-3-2 PG-TO220-3-1 Type IPB77N06S2-12 IPP77N06S2-12 Package PG-TO263-3-2 PG-TO220-3-1 Ordering Code Marking SP0002-18173 2N0612 SP0002-18172 2N0612 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T...