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IPB80N06S2L-11 - Power-Transistor

Datasheet Summary

Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Features

  • N-channel Logic Level - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free) PG-TO263-3-2.
  • Ultra low Rds(on).
  • 100% Avalanche tested IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Product Summary V DS R DS(on),max (SMD version) ID 55 V 10.7 mW 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2L-11 IPP80N06S2L-11 IPI80N06S2L-11 Package PG-TO263-3-.

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Datasheet Details

Part number IPB80N06S2L-11
Manufacturer Infineon Technologies
File Size 131.54 KB
Description Power-Transistor
Datasheet download datasheet IPB80N06S2L-11 Datasheet
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Full PDF Text Transcription

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OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Product Summary V DS R DS(on),max (SMD version) ID 55 V 10.
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