IPD053N08N3G
IPD053N08N3G is Power-Transistor manufactured by Infineon.
IPD053N08N3 G
OptiMOS®3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
80 5.3 90
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application previous engineering sample code: IPD06CN08N
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
V mW A
Type
IPD053N08N3 G
Package Marking
PG-TO252-3 053N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100...
