Datasheet Summary
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IPD05N03LB G
OptiMOS®2 Power-Transistor
Features
- Ideal for high-frequency dc/dc converters
- Qualified according to JEDEC for target applications
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
1)
Product Summary V DS R DS(on),max ID 30 4.8 90 V mΩ A
PG-TO252-3-11
Type IPD05N03LB G
Package PG-TO252-3-11
Ordering Code Q67042-S4262
Marking 05N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse...