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Type
IPD088N04L G
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant IPD088N04L G Type • Pb-free plating; RoHS compliant
1)
Product Summary V DS R DS(on),max ID 40 8.8 50 V mΩ A
Package Marking
PG-TO252-3 088N04L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.
IPD088N04LG Datasheet
