Datasheet4U Logo Datasheet4U.com

IPD600N25N3G Datasheet Power Transistor

Manufacturer: Infineon

Overview: IPD600N25N3 G OptiMOSTM3 Power-Transistor.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IPD600N25N3 N-Channel MOSFET INCHANGE
Infineon Logo IPD600N25N3 Power-Transistor Infineon

More Datasheets from Infineon

Part Number Description
IPD60R1K0CE MOSFET
IPD60R1K4C6 Power Transistor
IPD60R1K5CE MOSFET
IPD60R2K0C6 MOSFET
IPD60R2K1CE MOSFET
IPD60R380C6 MOSFET
IPD60R380E6 MOSFET
IPD60R385CP Power Transistor
IPD60R3K3C6 MOSFET
IPD60R400CE MOSFET

IPD600N25N3G Distributor