IPD60R950C6 Datasheet | Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor Cool MOS™C6600V 600VCool MOS™C6Power Transistor IPx60R950C6 Data Sheet Rev.2.5 Final Power Management&Multimarket 600V Cool MOS™ C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 Description Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ C6 series bines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more pact, lighter, and cooler. Features - Extremely low losses due to very low FOM Rdson- Qg and Eoss - Very high mutation ruggedness - Easy to use/drive - Fully qualified according to JEDEC for Industrial Applications - Pb-free plating, Halogen free mold pound Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Tele and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally remended. drain pin 2 gate pin 1 source pin 3 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 650 0.95 13 12 1.3 500 V " n C A µJ A/µs Type / Ordering Code IPD60R950C6 IPB60R950C6 IPP60R950C6 IPA60R950C6 Package PG-TO252 PG-TO263 PG-TO220 PG-TO220 Full PAK Marking...