IPD90N04S3-H4 - Power-Transistor

Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green package (RoHS compliant).
100% Avalanche tested IPD90N04S3-H4 Product Summary V DS R DS(on),max ID 40 V 4.3 mΩ 90 A PG-TO252-3-11 Type IPD90N04S3-H4 Package Marking PG-TO252-3-11 QN04H4 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T.

IPD90N04S3-H4 Power-Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – IPD90N04S3-H4

Datasheet Details

Part number	IPD90N04S3-H4
Manufacturer	Infineon
File Size	158.44 KB
Description	Power-Transistor
Datasheet	IPD90N04S3-H4 Datasheet
Additional preview pages of the IPD90N04S3-H4 datasheet.

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Full PDF Text Transcription

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD90N04S3-H4 Product Summary V DS R DS(on),max ID 40 V 4.

Published: Nov 11, 2015 |