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IPG20N10S4L-22 Datasheet

Manufacturer: Infineon
IPG20N10S4L-22 datasheet preview

IPG20N10S4L-22 Details

Part number IPG20N10S4L-22
Datasheet IPG20N10S4L-22 Datasheet PDF (Download)
File Size 190.94 KB
Manufacturer Infineon
Description Power-Transistor
IPG20N10S4L-22 page 2 IPG20N10S4L-22 page 3

IPG20N10S4L-22 Overview

OptiMOS™-T2 Power-Transistor.

IPG20N10S4L-22 Key Features

  • Dual N-channel Logic Level
  • Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS pliant)
  • 100% Avalanche tested
  • Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage
  • Power dissipation one channel active
  • case SMD version, device on PCB

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