IPG20N10S4L-22
IPG20N10S4L-22 is Power-Transistor manufactured by Infineon.
OptiMOS™-T2 Power-Transistor
Features
- Dual N-channel Logic Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on),max4) ID
100 V 22 mΩ 20 A
PG-TDSON-8-4
Type IPG20N10S4L-22
Package
Marking
PG-TDSON-8-4 4N10L22
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) one channel active
I D,pulse
- Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source...
