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IPG20N10S4L-22 - Power-Transistor

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Infineon Technologies

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IPG20N10S4L-22 Power-Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – IPG20N10S4L-22

Datasheet Details

Part number	IPG20N10S4L-22
Manufacturer	Infineon Technologies
File Size	190.94 KB
Description	Power-Transistor
Datasheet	IPG20N10S4L-22 Datasheet
Additional preview pages of the IPG20N10S4L-22 datasheet.

Product details

Features

Dual N-channel Logic Level - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested IPG20N10S4L-22 Product Summary VDS RDS(on),max4) ID 100 V 22 mΩ 20 A PG-TDSON-8-4 Type IPG20N10S4L-22 Package Marking PG-TDSON-8-4 4N10L22 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current on.

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Published: May 30, 2015 |