IPI030N10N3G
IPI030N10N3G is Power Transistor manufactured by Infineon.
IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
Type
IPP030N10N3 G IPI030N10N3 G
100 V 3 mW
100 A
Package Marking
PG-TO220-3 030N10N
PG-TO262-3 030N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T...
