IPI037N08N3G
IPI037N08N3G is Power-Transistor manufactured by Infineon.
OptiMOS™3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G
Product Summary V DS R DS(on),max ID
80 V 3.5 mΩ 100 A
Type
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Package Marking
PG-TO220-3 037N08N
PG-TO262-3 037N08N
PG-TO263-3 035N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbo...
