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IPI100N08S2-07 - Power-Transistor

This page provides the datasheet information for the IPI100N08S2-07, a member of the IPB-100N Power-Transistor family.

Datasheet Summary

Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free).
  • Ultra low Rds(on).
  • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 75 6.8 100 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB100N08S2-07 IPP100N08S2-07 IPI100N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-19044 SP0002-190.

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Datasheet preview – IPI100N08S2-07

Datasheet Details

Part number IPI100N08S2-07
Manufacturer Infineon Technologies
File Size 193.06 KB
Description Power-Transistor
Datasheet download datasheet IPI100N08S2-07 Datasheet
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www.DataSheet4U.com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 75 6.
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