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IPI111N15N3G Datasheet Power Transistor

Manufacturer: Infineon

Overview: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; Halogen free.
  • Qualified according to JEDEC1) for target.

IPI111N15N3 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Infineon Logo IPI111N15N3 Power-Transistor Infineon
INCHANGE Logo IPI111N15N3 N-Channel MOSFET INCHANGE

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