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IPI111N15N3G - Power Transistor

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant; Halogen free.
Qualified according to JEDEC1) for target.

Infineon Technologies

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IPI111N15N3G Power Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – IPI111N15N3G

Datasheet Details

Part number	IPI111N15N3G
Manufacturer	Infineon Technologies
File Size	732.59 KB
Description	Power Transistor
Datasheet	IPI111N15N3G Datasheet
Additional preview pages of the IPI111N15N3G datasheet.

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Full PDF Text Transcription

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IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.

Published: May 26, 2014 |