IPI200N25N3G Description
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor.
IPI200N25N3G Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
- case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 0.5 62 40 K/W
- 5340 297 4 18 20 45 12
- 22 7 13 64 4.2 135