• Part: IPI80N04S3-06
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 185.04 KB
Download IPI80N04S3-06 Datasheet PDF
Infineon
IPI80N04S3-06
IPI80N04S3-06 is Power-Transistor manufactured by Infineon.
OptiMOS®-T Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (RoHS pliant) - 100% Avalanche tested IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 Product Summary V DS R DS(on),max (SMD version) ID 40 V 5.4 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S3-06 IPI80N04S3-06 IPP80N04S3-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0406 3N0406 3N0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I...