IPP030N10N3G Overview
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor.
IPP030N10N3G Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- case Thermal resistance, junction
- ambient
- 0.5 K/W
