IPP065N06LG Datasheet | Infineon

Features - For fast switching converters and sync. rectification - N-channel enhancement - logic level - 175 °C operating temperature - Avalanche rated - Pb-free lead plating, Ro HS pliant Product Summary V DS R DS(on),max ID 60 6.5 80 V mΩ A Type IPB065N06L G IPP065N06L G Type IPB063N06L G Package IPP063N06L G Marking Package PG-TO263-3-2 P-TO263-3-2 065N06L PP-TO220-3-1 Marking PG-TO220-3-1 063N06L 065N06L 063N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 80 80 320 530 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 250 -55 ... 175 55/175/56 Current is limited by bondwire; with an R th JC=0.6 K/W the chip is able to carry 125 A. See figure 3 Rev. 1.1 page 1 2006-05-05 .. IPB065N06L G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=180 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=80 A V GS=4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=80 A 63 60 1.2 1.6 0.01 - IPP065N06L G Unit max. Values typ. 0.6 62 40 K/W 2 1 µA - 1 - 1 5.4 6.5...