IPP08CN10NG Datasheet | Infineon

.. IPB08CN10N G IPI08CN10N G IPP08CN10N G Opti MOS®2 Power-Transistor Features - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 175 °C operating temperature - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 100 8.2 95 V mΩ A - Ideal for high-frequency switching and synchronous rectification Type IPB08CN10N G IPI08CN10N G IPP08CN10N G Package Marking PG-TO263-3 08CN10N PG-TO262-3 08CN10N PG-TO220-3 08CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=95 A, R GS=25 Ω I D=95 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Value 95 68 380 262 6 ±20 167 -55 ... 175 55/175/56 m J k V/µs V W °C Unit A Rev. 1.02 page 1 2006-06-02 .. IPB08CN10N G IPI08CN10N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction 4) ambient (TO220, TO262, TO263) R th JC R th JA minimal footprint 6 cm2 cooling area5) 0.9 62 40 K/W IPP08CN10N G Unit max. Values typ. Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=130 µA V DS=100 V, V GS=0 V, T j=25 °C V DS=100 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=95 A, (TO263) V GS=10 V, I D=95 A, (TO220, TO262) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I...