IPP13N03LBG Overview
IPP13N03LB G OptiMOS®2 Power-Transistor.
IPP13N03LBG Key Features
- Ideal for high-frequency dc/dc converters
- Qualified according to JEDEC1) for target application
- N-channel
- Logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Superior thermal resistance
- 175 °C operating temperature
- dv /dt rated
- Pb-free lead plating; RoHS pliant PG-TO220-3-1