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IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID 250 20 64 V mW A
• Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Package Marking
PG-TO263-3 200N25N
PG-TO220-3 200N25N
PG-TO262-3 200N25N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse
IPP200N25N3G Datasheet
