IPP60R520E6 Datasheet | Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor Cool MOS™E6600V 600VCool MOS™E6Power Transistor IPx60R520E6 Data Sheet Rev.2.2 Final Power Management&Multimarket 600V Cool MOS" E6 Power Transistor IPP60R520E6, IPA60R520E6 1 Description Cool MOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Cool MOS" E6 series bines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more pact, lighter, and cooler. Features - Extremely low losses due to very low FOM Rdson- Qg and Eoss - Very high mutation ruggedness - Easy to use/drive - JEDEC1) qualified, Pb-free plating, halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Tele and UPS. drain pin 2 gate pin 1 source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally remended. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 650 0.52 23.4 22 2.1 500 V ! n C A µJ A/µs Type / Ordering Code IPA60R520E6 IPP60R520E6 Package PG-TO220 Full PAK PG-TO220 Marking 6R520E6 Related Links IFX Cool MOS Webpage IFX Design...