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IPD64CN10N G IPU64CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max ID 100 64 17 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPD64CN10N G IPU64CN10N G
Package Marking
PG-TO252-3 64CN10N
PG-TO251-3 64CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC c
IPP64CN10N Datasheet
