IPP64CN10N Datasheet | Infineon

IPD64CN10N G IPU64CN10N G Opti MOS®2 Power-Transistor Features - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 175 °C operating temperature - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID 100 64 17 V mΩ A - Ideal for high-frequency switching and synchronous rectification Type IPD64CN10N G IPU64CN10N G Package Marking PG-TO252-3 64CN10N PG-TO251-3 64CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 17 13 68 34 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=17 A, R GS=25 Ω I D=17 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 44 -55 ... 175 55/175/56 J-STD20 and JESD22 see figure 3 3) T jmax=150°C and duty cycle D =0.01 for V GS<-5V page 1 2006-02-21 ..net Rev. 1.01 IPD64CN10N G IPU64CN10N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO252) R th JC minimal footprint 6 cm² cooling area 4) 3.4 75 50 K/W Values typ. max....