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OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested
IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12
Product Summary V DS R DS(on),max (SMD version) ID
100 V 12 mW 70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 3N10L12 3N10L12 3N10L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V1)
Pulsed drain current1) Avalanche energy, single pulse1)
I D,pulse E AS
T C=25 °C I D=35A
Avalanche current, single pulse G
IPP70N10S3L-12 Datasheet
