• Part: IPP80N04S2-04
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 156.71 KB
Download IPP80N04S2-04 Datasheet PDF
Infineon
IPP80N04S2-04
IPP80N04S2-04 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) PG-TO263-3-2 - Ultra low Rds(on) - 100% Avalanche tested IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.4 mΩ 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N04S2-04 IPP80N04S2-04 IPI80N04S2-04 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code Marking SP0002-18154 2N0404 SP0002-19054 2N0404 SP0002-19058 2N0404 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D=80A Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 320 810 ±20 300 -55 ... +175 55/175/56 Unit A m J V W °C Rev. 1.0 page...