IPS12N03LBG Description
Type IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G OptiMOS®2 Power-Transistor Package Marking Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) .. Product Summary V DS R DS(on),max ID 30 11.6 30 V mΩ A Superior 175 °C operating temperature Pb-free lead plating; 175 55/175/56 mJ kV/µs V W °C Unit A Rev.