IPU050N03L Datasheet | Infineon

..net Type IPD050N03L G IPS050N03L G IPF050N03L G IPU050N03L G Opti MOS®3 Power-Transistor Features - Fast switching MOSFET for SMPS - Optimized technology for DC/DC converters - Qualified according to JEDEC for target applications - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Avalanche rated - Pb-free plating; Ro HS pliant Type IPD050N03L G IPF050N03L G 1) Product Summary V DS R DS(on),max ID 30 5 50 V mΩ A IPS050N03L G IPU050N03L G Package Marking PG-TO252-3-11 050N03L PG-TO252-3-23 050N03L PG-TO251-3-11 050N03L PG-TO251-3-21 050N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 50 50 50 50 350 50 60 6 ±20 Unit A I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=35 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V J-STD20 and...