IPU12N03LBG Datasheet | Infineon

Type IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G Opti MOS®2 Power-Transistor Package Marking - Qualified according to JEDEC1) for target applications - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) .. Product Summary V DS R DS(on),max ID 30 11.6 30 V mΩ A - Superior thermal resistance - 175 °C operating temperature - Pb-free lead plating; Ro HS pliant Type IPD12N03LB G IPS12N03LB G IPF12N03LB G IPU12N03LB G Package Marking PG-TO252-3-11 12N03LB PG-TO251-3-11 12N03LB PG-TO252-3-23 12N03LB PG-TO251-3-1 12N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 120 64 6 ±20 52 -55 ... 175 55/175/56 m J k V/µs V W °C Unit A Rev. 1.5 page 1 2006-05-15 IPD12N03LB G IPU12N03LB G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB .. IPS12N03LB G IPF12N03LB G Unit max. Values typ. R th JC R th JA minimal footprint 6 cm2 cooling area5) - - 2.9 75 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=20 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=20 A V GS=4.5 V, I D=20 A, SMD version V GS=10 V, I D=30 A V GS=10 V, I D=30 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 30 1.2 1.6...