IPW60R099P6
Description
inal Data Sheet 3 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage (static) Gate source voltage (dynamic) Power dissipatio.
Key Features
- IncreasedMOSFETdv/dtruggedness
- ExtremelylowlossesduetoverylowFOMRdson
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
