K07N120 Datasheet | Infineon

SKW07N120 .. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Em Con diode - Lower Eoff pared to previous generation - Short circuit withstand time - 10 µs - Designed for: - Motor controls - Inverter - SMPS - NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 - Qualified according to JEDEC for target applications - Pb-free lead plating; Ro HS pliant - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKW07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C PG-TO-247-3-1 (TO-247AC) VCE 1200V IC 8A Eoff 0.7m J Tj 150°C Marking K07N120 Package PG-TO-247-3-21 Symbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul s IF 27 27 13 7 IFpul s VGE t SC Ptot 27 ±20 10 125 V µs W VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_1 Apr 06 Power Semiconductors SKW07N120 .. Thermal Resistance Parameter Characteristic IGBT thermal resistance,...