P30N60T
P30N60T is IGP30N60T manufactured by Infineon.
Trench Stop Series
IGP30N60T IGW30N60T
Low Loss IGBT in Trench and Fieldstop technology
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- Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time
- 5µs Designed for :
- Frequency Converters
- Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution P-TO-220-3-1 (TO-220AB)
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge plete product spectrum and PSpice Models : http://.infineon./igbt/ VCE 600V 600V IC 30A 30A VCE(sat),Tj=25°C 1.5V 1.5V Tj,max 175°C 175°C Marking Code G30T60 G30T60 Package TO-220 TO-247
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P-TO-247-3-1 (TO-220AC)
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Type IGP30N60T IGW30N60T
Ordering Code Q67040S4722 Q67040S4724
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Gate-emitter voltage Short circuit withstand time
1)
Symbol VCE IC
Value 600 60 30
Unit V A
ICpuls VGE t SC Ptot Tj Tstg
- 90 90 ±20 5 187 -40...+175 -55...+175 260 V µs W °C
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 Dec-04
Power Semiconductors
Trench Stop Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
- case Thermal resistance, junction
- ambient Rth JA P-TO-220-3-1 P-TO-247-3-1 Rth JC Symbol Conditions
IGP30N60T IGW30N60T
Max. Value 0.80 62 40 Unit K/W
.. Electrical Characteristic, at Tj = 25 °C, unless otherwise...