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PTFA180701F

Manufacturer: Infineon

PTFA180701F datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA180701F datasheet preview

PTFA180701F Datasheet Details

Part number PTFA180701F
Datasheet PTFA180701F PTFA180701E Datasheet (PDF)
File Size 379.16 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA180701F page 2 PTFA180701F page 3

PTFA180701F Overview

The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band.

PTFA180701F Key Features

  • Average output power = 44 dBm
  • Gain = 16.5 dB
  • Efficiency = 40.5%
  • EVM = 2.0% Typical CW performance
  • Output power at P-1dB = 72 W
  • Gain = 15.5 dB
  • Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • Output Power, avg. (dBm)
  • See Infineon distributor for future availability
  • 0.125 2.5
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PTFA180701F Distributor

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