PTFA180701F Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz ..

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	PTFA180701F
Manufacturer	Infineon
File Size	379.16 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA180701F PTFA180701E Datasheet (PDF)

The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band.

include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2 EDGE EVM Performance VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz 5 50 Features.
40 Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical EDGE p.

Part Number	Description
PTFA180701E	Thermally-Enhanced High Power RF LDMOS FET
PTFA181001E	Thermally-Enhanced High Power RF LDMOS FET
PTFA181001F	Thermally-Enhanced High Power RF LDMOS FET
PTFA181001GL	Thermally-Enhanced High Power RF LDMOS FET
PTFA181001HL	Thermally-Enhanced High Power RF LDMOS FET
PTFA182001E	Thermally-Enhanced High Power RF LDMOS FET
PTFA142401EL	Thermally-Enhanced High Power RF LDMOS FET
PTFA142401FL	Thermally-Enhanced High Power RF LDMOS FET
PTFA190451E	Thermally-Enhanced High Power RF LDMOS FET
PTFA190451F	Thermally-Enhanced High Power RF LDMOS FET