Part PTFA180701F
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 379.16 KB
Infineon

PTFA180701F Overview

Description

The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges.

Key Features

  • 40 Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical EDGE performance
  • Average output power = 44 dBm
  • Gain = 16.5 dB
  • Efficiency = 40.5%
  • EVM = 2.0% Typical CW performance
  • Output power at P–1dB = 72 W
  • Gain = 15.5 dB
  • Unit % dBc dBc dB % ηD *See Infineon distributor for future availability. PTFA180701E PTFA180701F RF Characteristics (cont.) Two-tone M