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PTFA182001E

Manufacturer: Infineon

PTFA182001E datasheet by Infineon.

PTFA182001E datasheet preview

PTFA182001E Datasheet Details

Part number PTFA182001E
Datasheet PTFA182001E_InfineonTechnologies.pdf
File Size 271.73 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA182001E page 2 PTFA182001E page 3

PTFA182001E Overview

The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz.

PTFA182001E Key Features

  • Drain Efficiency (%)
  • Average output power = 50 dBm
  • Linear gain = 16.3 dB
  • Efficiency = 37%
  • EVM = 3.1%
  • 400 kHz modulation = -61 dBc
  • 600 kHz modulation = -76 dBc Typical CW performance, 1880 MHz, 30 V
  • Output power at P-1dB = 220 W
  • Efficiency = 49% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • See Infineon distributor for future availability
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PTFA182001E Distributor

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