• Part: PTFA182001E
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 271.73 KB
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Datasheet Summary

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz ..net Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA182001E Package H-30260-2 2-Tone Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz -25 45 Features - - - Drain Efficiency (%) Pb-free, RoHS-pliant and thermally-enhanced...