PTFA190451F Datasheet | Infineon

scription The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA190451E Package H-36265-2 PTFA190451F Package H-37265-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 450 m A, ƒ = 1960 MHz, 3GPP WCDMA signal, PAR = 8 d B, 10 MHz carrier spacing -25 35 Features - - Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 d B - Efficiency = 28.0% - Intermodulation distortion = - 39 d Bc - Adjacent channel power = - 42 d Bc Typical CW performance, 1960 MHz, 28 V - Output power at P- 1d B = 60 W - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power Pb-free and Ro HS pliant IM3 (d Bc), ACPR (d Bc) -30 -35 -40 -45 -50 -55 30 32 34 36 Efficiency IM3 30 25 20 15 Drain Efficiency (%) - ACPR - - - - 10 5 Average Output Power (d Bm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 m A, POUT = 11 W...