PTFA190451F Datasheet (Infineon)

Part PTFA190451F
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 386.25 KB
Infineon

PTFA190451F Overview

Key Specifications

Mount Type: Surface Mount
Pins: 3
Max Frequency: 1.99 GHz
Max Operating Temp: 200 °C

Description

The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges.

Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V
  • Average output power = 11 W
  • Linear gain = 17.5 dB
  • Efficiency = 28.0%
  • Intermodulation distortion = –39 dBc

Price & Availability

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