PTFA190451F Datasheet PDF - Infineon Technologies Thermally-Enhanced High Power RF LDMOS FET Specs

PTFA190451F - Thermally-Enhanced High Power RF LDMOS FET

This page provides the datasheet information for the PTFA190451F, a member of the PTFA190451E Thermally-Enhanced High Power RF LDMOS FET family.

Datasheet Summary

Description

The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band.

These devices are available in thermally-enhanced packages with eared or earless flanges.

Features

Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion =.
39 dBc - Adjacent channel power =.
42 dBc Typical CW performance, 1960 MHz, 28 V - Output power at P.
1dB = 60 W - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSW.

Datasheet Details

Part number	PTFA190451F
Manufacturer	Infineon Technologies
File Size	386.25 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA190451F Datasheet
Additional preview pages of the PTFA190451F datasheet.

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Full PDF Text Transcription

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PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Published: Jul 11, 2011 |