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PTFA192401F - Thermally-Enhanced High Power RF LDMOS FET

This page provides the datasheet information for the PTFA192401F, a member of the PTFA192401E Thermally-Enhanced High Power RF LDMOS FET family.

Datasheet Summary

Description

The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 34 36 38 40 42 44 46 4.

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Datasheet preview – PTFA192401F

Datasheet Details

Part number PTFA192401F
Manufacturer Infineon Technologies
File Size 441.79 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA192401F Datasheet
Additional preview pages of the PTFA192401F datasheet.

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Full PDF Text Transcription

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PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.
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