PTFA192401F Datasheet | Infineon

scription The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 m A, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 d B, 3.84 MHz BW -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 34 36 38 40 42 44 46 48 50 35 30 25 Features - - - Drain Efficiency (%) Pb-free, Ro HS-pliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 47.0 d Bm - Linear Gain = 16 d B - Efficiency = 27.5% - Intermodulation distortion = - 35 d Bc - Adjacent channel power = - 41 d Bc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, PAR = 8.5 d B - Average output power = 49 d Bm - Linear Gain = 16 d B - Efficiency = 33% - Adjacent channel power = - 33 d Bc Typical CW performance, 1960 MHz, 30 V - Output power at P- 1d B = 240 W - Efficiency = 54% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output power Adjacent Channel Power Ratio (d B) Efficiency ACPR Low 20 15 10 - ACPR Up 5...