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PTFA192401F Datasheet

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA192401F datasheet preview

Datasheet Details

Part number PTFA192401F
Datasheet PTFA192401F PTFA192401E Datasheet (PDF)
File Size 441.79 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA192401F page 2 PTFA192401F page 3

PTFA192401F Overview

The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

PTFA192401F Key Features

  • Drain Efficiency (%)
  • Average output power = 47.0 dBm
  • Linear Gain = 16 dB
  • Efficiency = 27.5%
  • Intermodulation distortion = -35 dBc
  • Adjacent channel power = -41 dBc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
  • Average output power = 49 dBm
  • Linear Gain = 16 dB
  • Efficiency = 33%
  • Adjacent channel power = -33 dBc Typical CW performance, 1960 MHz, 30 V
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PTFA192401F Distributor

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