PTFB183408SV - High Power RF LDMOS Field Effect Transistor

Product Overview

Infineon Technologies

Datasheet Details

Part number	PTFB183408SV
Manufacturer	Infineon Technologies
File Size	250.19 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFB183408SV Datasheet
Additional preview pages of the PTFB183408SV datasheet.

Product details

Description

The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 1805 to 1880 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183408SV Package H-37275G-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 30 -35 IMD Low IMD Up -40 25 20 -45 15 -50 A.

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Published: Oct 22, 2015 |