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PTFB191501F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFB191501F datasheet PDF. This datasheet also covers the PTFB191501E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

Key Features

  • include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB191501E Package H-36248-2 PTFB191501F Package H-37248-2 PTFB191501E PTFB191501F IMD (dBc) Efficiencydiscontinu(%)ed products Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB191501E-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB191501F
Manufacturer Infineon
File Size 322.39 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB191501F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB191501E Package H-36248-2 PTFB191501F Package H-37248-2 PTFB191501E PTFB191501F IMD (dBc) Efficiencydiscontinu(%)ed products Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.