PTFB192503FL - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon Technologies

Datasheet Details

Part number	PTFB192503FL
Manufacturer	Infineon Technologies
File Size	442.12 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFB192503FL Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFB192503FL, PTFB192503EL. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFB192503FL datasheet.

Product details

Description

The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.

Features

include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB192503FL Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.84MHz 20 50 19 Gain 40 18.

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Published: Nov 27, 2016 |