Datasheet Details
| Part number | PTFB241402F |
|---|---|
| Manufacturer | Infineon Technologies |
| File Size | 439.18 KB |
| Description | High Power RF LDMOS Field Effect Transistor |
| Datasheet |
 PTFB241402F Datasheet
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| Part number | PTFB241402F |
|---|---|
| Manufacturer | Infineon Technologies |
| File Size | 439.18 KB |
| Description | High Power RF LDMOS Field Effect Transistor |
| Datasheet |
PTFB241402F Datasheet
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The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package.
It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band.
Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.