Datasheet Details
| Part number | PTFB241402F |
|---|---|
| Manufacturer | Infineon |
| File Size | 439.18 KB |
| Description | High Power RF LDMOS Field Effect Transistor |
| Datasheet | PTFB241402F-InfineonTechnologies.pdf |
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Overview: PTFB241402F High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400.
| Part number | PTFB241402F |
|---|---|
| Manufacturer | Infineon |
| File Size | 439.18 KB |
| Description | High Power RF LDMOS Field Effect Transistor |
| Datasheet | PTFB241402F-InfineonTechnologies.pdf |
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The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package.
It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band.
Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.
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