SGW50N60HS - High Speed IGBT

Infineon Technologies

Datasheet Details

Part number	SGW50N60HS
Manufacturer	Infineon Technologies
File Size	345.79 KB
Description	High Speed IGBT
Datasheet	SGW50N60HS Datasheet
Additional preview pages of the SGW50N60HS datasheet.

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SGW50N60HS www.DataSheet4U.com High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 50A Eoff25 Tj Marking Package PG-TO-247-3-21 PG-TO-247-3-21 G E Type SGW50N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C 0.

Published: Mar 16, 2009 |