Datasheet4U Logo Datasheet4U.com

SIGC04T60 - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2004 All Rights

Key Features

  • 600V Trench & Field Stop technology.
  • low VCE(sat).
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling 3 This chip is used for:.
  • power module.
  • discrete components.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIGC04T60E IGBT Infineon
SIGC04T60GE IGBT Infineon
SIGC04T60GSE IGBT Infineon
SIGC04T65E IGBT Infineon
SIGC03T60E IGBT Infineon

Other Datasheets by Infineon

Part Number Description
SIGC04T60G IGBT
SIGC06T120CS IGBT
SIGC06T60 IGBT
SIGC06T60G IGBT
SIGC07T60NC IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SIGC04T60 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module • discrete components Applications: • drives • white goods • resonant applications C G E Chip Type SIGC04T60 VCE 600V ICn 6A Die Size 1.98 x 1.96 mm2 Package sawn on foil Ordering Code Q67050A4330-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 1.98 x 1.96 1.254 x 1.273 0.266 x 0.266 3.9 / 2.