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SIGC08T60
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
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This chip is used for: • power module • discrete components Applications: • drives • white goods • resonant applications
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Chip Type SIGC08T60
VCE 600V
ICn 15A
Die Size 2.86 x 2.82 mm2
Package sawn on foil
Ordering Code Q67050A4282-A101
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 2.86 x 2.82 2.014 x 2.014 0.361 x 0.513 8.0 / 5.
SIGC08T60 Datasheet
