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Preliminary
SIGC109T120R3
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC109T120R3
VCE
ICn
Die Size 10.47 x 10.44 mm2
Package sawn on foil
Ordering Code Q67050A4108-A001
1200V 100A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 10.47 x 10.44 8x(2.114 x 4.391) 1.139 x 1.139 109.3 / 85.
SIGC109T120R3 Datasheet
