Click to expand full text
www.DataSheet4U.com
Preliminary
SIGC158T170R3
IGBT Chip
FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC158T170R3
VCE
ICn
Die Size 12.57 x 12.57 mm2
Package sawn on foil
Ordering Code Q67050A4227-A101
1700V 125A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.57 x 12.57 4 x ( 5.05 x 2.32 ) 4 x ( 5.05 x 2.54 ) 1.12 x 1.12 158 / 124.
SIGC158T170R3 Datasheet
