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SIGC15T60UN - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling This chip is used for:.
  • SGB15N60HS.

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Datasheet Details

Part number SIGC15T60UN
Manufacturer Infineon
File Size 89.28 KB
Description IGBT
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www.DataSheet4U.com SIGC15T60UN High Speed IGBT Chip in NPT-technology FEATURES: • • • • • • low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling This chip is used for: • SGB15N60HS Applications: • Welding • PFC • UPS C G E Chip Type SIGC15T60UN VCE 600V ICn 15A Die Size 3.2 x 4.55 mm2 Package sawn on foil Ordering Code Q67050-A4221A101 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.2 x 4.55 14.6 / 10.7 2.2 x 1.7 1.1 x 0.
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