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SIGC28T60
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
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This chip is used for: • power module • discrete components Applications: • drives
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Chip Type SIGC28T60
VCE 600V
ICn 50A
Die Size 6.57 x 4.2 mm2
Package sawn on foil
Ordering Code Q67050A4337-A101
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 6.57 x 4.2 2.166 x 3.401 2.432 x 3.401 0.817 x 1.52 27.
SIGC28T60 Datasheet
