Datasheet4U Logo Datasheet4U.com

SIGC54T60R3 - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2004 All Rights

Features

  • 600V Trench & Field Stop technology.
  • low VCE(sat).
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling 3 This chip is used for:.
  • power module C.

📥 Download Datasheet

Datasheet preview – SIGC54T60R3

Datasheet Details

Part number SIGC54T60R3
Manufacturer Infineon
File Size 114.31 KB
Description IGBT
Datasheet download datasheet SIGC54T60R3 Datasheet
Additional preview pages of the SIGC54T60R3 datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SIGC54T60R3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC54T60R3 VCE 600V ICn 100A Die Size 5.97 x 8.97 mm2 Package sawn on foil Ordering Code Q67050A4341-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 5.97 x 8.97 ( 2.489 x 1.767 ) x 4 ( 2.789 x 1.995 ) x 4 1.615 x 0.817 53.
Published: |